Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation

Electron-irradiation-induced deep levels in n-type 6H–SiC

Metastable defects in low-energy electron irradiated n-type 4H-SiC

Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer

Spin resonance of localized electrons bound to donors in a specially designed n-GaAs layer has been performed at 236 MHz and 41 mT, using circular polarized light to polarize the electrons and photoluminescence to detect the electronic polarization. The polarization was diminished under the resonance condition. The electronic g factor obtained by this measurement is 20.4160.01. The resonance li...

Electrically active point defects in n-type 4H–SiC

An electrically active defect has been observed at a level position of ;0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ;5310 214 cm in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1310 cm. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after elec...

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC